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Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
500
V GS = 15.0 V
10.0 V
8.0 V
500
175 C
100
7.0 V
6.5 V
6.0 V
100
o
25 C
-55 C
2. T C = 25 C
10
5.5 V
5.0 V
*Notes:
1. 250 μ s Pulse Test
o
10
o
o
*Notes:
1. V DS = 20V
2. 250 μ s Pulse Test
2
0.2
0.1 1
10
1
2
3
4 5 6
7
V DS ,Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.020
V GS ,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
500
175 C
25 C
0.015
0.010
V GS = 10V
100
o
o
*Note: T C = 25 C
V GS = 20V
o
10
*Notes:
1. V GS = 0V
2. 250 μ s Pulse Test
0.005
0
100 200
300
3
0.0
0.4 0.8 1.2
1.6
I D , Drain Current [A]
Figure 5. Capacitance Characteristics
8000
V SD , Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
6000
C iss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
8
V DS = 15V
V DS = 37.5V
V DS = 60V
6
4000
C oss
4
2000
C rss
*Notes:
1. V GS = 0V
2. f = 1MHz
2
*Note: I D = 75A
0
0.1
1 10
V DS , Drain-Source Voltage [V]
30
0
0
20 40 60 80
Q g , Total Gate Charge [nC]
100
?2009 Fairchild Semiconductor Corporation
FDB088N08 Rev. C2
3
www.fairchildsemi.com
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